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2020-8-6 TAILORABLE SILICON CARBIDE CERAMICS Microstructure An optical micrograph of the NSC-20 material, fabricated by silicon infiltration of carbon preforms, is given in Fig. 2. Complete conversion of carbon to silicon carbide and the uniform distribution of a silicon phase (white) throughout a silicon carbide matrix (grey) are evident in Fig. 2.
2020-3-24 SiC system cost is lower than an IGBT solution. Even if the inherent advantages of SiC were not enough: high critical breakdown voltage; high-temperature operation; excellent figures of merit for on-resistance with die area and switching losses; fast switching and much more, the latest ‘Generation 3’ SiC-FET devices from UnitedSiC using normally-off cascodes have pushed the boundaries